Production specification
N-Channel Enhancement Mode Field Effect Transistor 2N7002W
FEATURES
Low On-Resistance。 Lo...
Production specification
N-Channel Enhancement Mode Field Effect
Transistor 2N7002W
FEATURES
Low On-Resistance。 Low Gate Threshold Voltage. Low Input Capacitance. Fast Switching Speed. Low Input/Output Leakage.
Pb
Lead-free
APPLICATIONS
N-channel enhancement mode effect
transistor. Switching application.
ORDERING INFORMATION
Type No.
Marking
2N7002W
7002
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
60
VDGR VGSS ID PD
Drain-Gate voltage(RGS≤1MΩ)
Gate -Source voltage - continuous -Non Repetitive (tp<50μs)
Maximum Drain current -continuous -Pulsed
Power Dissipation
60
±20 ±40 115 800
200
RθJA Thermal resistance,Junction-to-Ambient 625
TJ, Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃/W ℃
F008 Rev.A
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Production specification
N-Channel Enhancement Mode Field Effect
Transistor 2N7002W
ELECTRICAL ...