Document
P-CHANNEL 130mA POWER MOSFET
BSS84W
FEATURES
ADVANCED TRENCH PROCESS TECHNOLOGY HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE FULLY CHARACTERIZED AVALANCHE VOLTAGE AND
CURRENT IMPROVED SHOOT-THROUGH FOM BOTH NORMAL AND PB FREE PRODUCT
ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB PB FREE: 99% SN ABOVE
MECHANICAL DATA
WE DECLARE THAT THE MATERIAL OF PRODUCT COMPLIANCE WITH ROHS REUIREMENTS.
Pb Free: BSS84W Halogen Free: BSS84W-H
CASE:SOT-323 DIMENSIONS IN MILLIMETERS AND (INCHES)
ABSOLUTE MAXIMUM RATINGS
RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED.
PATING
SYMBOL
DRAIN-SOURCE VOLTAGE GATE-SOURCE VOLTAGE MAXIMUM DRAIN CURRENT-CONTINUE MAXIMUM POWER DISSIPATION DERATING @ TA = 25°C OPERATING AND STORAGE JUNCTION TEMPERATURE RANGE
THERMAL RESISTANCE, JUNCTION−TO−AMBIENT (NOTE1)
VDSS VGSS
ID PD
TJ;TSTG
RθJA
NOTE:1. 1-in2 2oz Cu PCB board
BSS84W 50 ±20 130 225
- 55 TO +150
556
UNITS V V mA mW
℃
℃/W
STD-2008-Z0
PAGE.