BSS8402DW

Production specification Complementary Pair Enhancement Mode Field Effect Transistor BSS8402DW FEATURES  Low On-Resistance.  Low Gate Threshold Voltage.  Low Input Capacitance.  Fast Switching Speed.  Low Input/Output Leakage.  Complementary Pair. Pb Lead-free SOT-363 ORDERING INFORMATION Type No. Marking BSS8402DW KNP Package Code SOT-363 MAXIMUM RATING – Total Device @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units PD Power Dissipation 200 mW RθJA Thermal resistance,Junction-to-Ambient 625 ℃/W TJ, Tstg Junction and Storage Temperature -55 to +150 ℃ Maximum Ratings N-CHANNEL –Q1, 2N7002 Section @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 60 VDGR VGSS ID Drain-Gate voltage(RGS≤1.0MΩ) Gate -Source voltage continuous Pulsed Drain current continuous continuous@100℃ Pulsed 60 ±20 ±40 115 73 800 Units V V V mA G040 Rev.A www.gmesemi.com 1 Production spec...