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BL1N60
N-Channel Power Mosfet
Description
Production specification N-Channel Enhancement Mode Field Effect
Transistor
FEATURES RDS(ON) =9.3Ω@VGS = 10V. Pb Ultra Low gate charge (typical 5.0nC) Lead-free Low reverse transfer capacitance (CRSS = typical 3.0 pF) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness BL1N60 TO-220AB MAXIMU...
GME
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