BL50N60

50A,60V N-Channel Power Mosfet FEATURES  RDS(ON) =17mΩ@ VGS = 10V,ID=20A  High Current Capacity : ID=50A  Low reverse current. Pb Lead-free Production specification BL50N60 TO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current PD Power Dissipation TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature Value 60 ±20 50 2 150 -55 to +150 Units V V A W ℃ ℃ X099 Rev.A www.gmesemi.com 1 Production specification 50A,60V N-Channel Power Mosfet BL50N60 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static drain-Source on-resistance BVDSS IDSS IGSS VGS=0V,ID=250μA VDS=60V, VGS=0V VDS=0V, VGS=±20V 60 - -- V - 1 μA - ±...