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BL2N65I

GME

N-Channel Power Mosfet


Description
2 Amps, 600 Volts N-CHANNEL MOSFET FEATURES  RDS(on)=3.8Ω@VGS=10V. Pb  Ultra Low gate charge (typical 9.0nC) Lead-free  Low reverse transfer capacitance (Crss = typical 5.0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL2N65I/2N65D TO-251 TO-252 MAXIMUM RATING ...



GME

BL2N65I

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