BL3N80

2.5A,800V N-Channel Power Mosfet FEATURES  RDS(ON) =3.8Ω@ VGS = 10V  Ultra low gate charge ( typical 19 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 11 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL3N80 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Ambient Junction Temperature TOPR, Tstg Operating and Storage Temperature TO-220AB Value 800 ±30 2.5 10 170 4.5 70 62.5 +150 -55 to +150 Units V V A A mJ V/ns W ℃/W ℃ ℃ X117 Rev.A www.gmesemi.com 1 Production specification 2.5A,800V N-Channel Power Mosfet BL3N80 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specif...