N-Channel Power Mosfet
4A,600V N-Channel Power Mosfet
FEATURES
RDS(ON) =2.5Ω@ VGS = 10V Ultra low gate charge ( typical 15 nC )
Pb
Lead-...
Description
4A,600V N-Channel Power Mosfet
FEATURES
RDS(ON) =2.5Ω@ VGS = 10V Ultra low gate charge ( typical 15 nC )
Pb
Lead-free
Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL4N60
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source voltage
VGSS
Gate -Source voltage
TO-220AB
Value 600 ±30
Units V V
IAR Avalanche Current (Note1)
4.4 A
ID Continuous Drain Current
4.0 A
IDM EAS EAR dv/dt PD
θJA
θJC
θCS
TJ
Pulsed Drain Current
Avalanche Energy
Single Pulsed(Note2) Repetitive
Peak Diode Recovery dv/dt(Note3)
16
260 10.6 4.5
Power Dissipation
106
Junction-to-Ambient
62.5
Junction-to-Case
3
Case-to Sink
0.5
Junction Temperature
+150
A mJ V/ns W ℃/W ℃/W ℃/W ℃
Tstg
Operating and Storage Temperature
-55 to +150
℃
X139 Rev.A
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