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BCP68 Dataheets PDF



Part Number BCP68
Manufacturers NXP
Logo NXP
Description NPN medium power transistor
Datasheet BCP68 DatasheetBCP68 Datasheet (PDF)

BCP68; BC868; BC68PA 20 V, 2 A NPN medium power transistors Rev. 8 — 18 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NXP BCP68 SOT223 BC868 SOT89 BC68PA SOT1061 JEITA SC-73 SC-62 - JEDEC TO-243 - PNP complement BCP69 BC869 BC69PA [1] Valid for all available selection groups. 1.2 Features and benefits  High current .

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BCP68; BC868; BC68PA 20 V, 2 A NPN medium power transistors Rev. 8 — 18 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NXP BCP68 SOT223 BC868 SOT89 BC68PA SOT1061 JEITA SC-73 SC-62 - JEDEC TO-243 - PNP complement BCP69 BC869 BC69PA [1] Valid for all available selection groups. 1.2 Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified 1.3 Applications  Linear voltage regulators  Low-side switches  Battery-driven devices  Power management  MOSFET drivers  Amplifiers 1.4 Quick reference data Table 2. Symbol VCEO IC ICM Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current single pulse; tp  1 ms Min Typ Max Unit - - 20 V - - 2A - - 3A NXP Semiconductors BCP68; BC868; BC68PA 20 V, 2 A NPN medium power transistors Table 2. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit hFE DC current gain VCE = 1 V; IC = 500 mA [1] 85 - 375 hFE selection -25 VCE = 1 V; IC = 500 mA [1] 160 - 375 [1] Pulse test: tp  300 s;  = 0.02. 2. Pinning information Table 3. Pin SOT223 1 2 3 4 Pinning Description base collector emitter collector SOT89 1 2 3 emitter collector base Simplified outline Graphic symbol 4 123 2, 4 1 3 sym016 321 2 3 1 sym042 SOT1061 1 2 3 base emitter collector 3 12 Transparent top view 3 1 2 sym021 BCP68_BC868_BC68PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 2 of 23 NXP Semiconductors BCP68; BC868; BC68PA 20 V, 2 A NPN medium power transistors 3. Ordering information 4. Marking Table 4. Ordering information Type number[1] Package Name Description BCP68 SC-73 plastic surface-mounted package with increased heatsink; 4 leads BC868 SC-62 plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads BC68PA HUSON3 plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2  2  0.65 mm [1] Valid for all available selection groups. Version SOT223 SOT89 SOT1061 Table 5. Marking codes Type number BCP68 BCP68-25 BC868 BC868-25 BC68PA BC68-25PA Marking code BCP68 BCP68/25 CAC CDC AR AS BCP68_BC868_BC68PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 3 of 23 NXP Semiconductors BCP68; BC868; BC68PA 20 V, 2 A NPN medium power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VCBO VCEO VEBO IC ICM IB IBM Ptot collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current peak base current total power dissipation BCP68 open emitter open base open collector single pulse; tp  1 ms single pulse; tp  1 ms Tamb  25 C - - [1] - [2] - [3] - BC868 [1] - [2] - [3] - BC68PA [1] - [2] - [3] - [4] - [5] - Tj Tamb Tstg junction temperature ambient temperature storage temperature 55 65 Max Unit 32 V 20 V 5V 2A 3A 0.4 A 0.4 A 0.65 1.00 1.35 0.50 0.95 1.35 0.42 0.83 1.10 0.81 1.65 150 +150 +150 W W W W W W W W W W W C C C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2. BCP68_BC868_BC68PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 4 of 23 NXP Semiconductors BCP68; BC868; BC68PA 20 V, 2 A NPN medium power transistors 1.5 Ptot (W) 1.0 0.5 (1) (2) (3) 006aac674 1.5 Ptot (W) 1.0 (1) (2) (3) 0.5 006aac675 0.0 –75 –25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves SOT223 2.0 Ptot (W) 1.5 (1) (2) 1.0 (3) (4) 0.5 (5) 0.0 –75 –25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 2. Power derating curves SOT.


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