BCP68

BCP68 BCP68 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers. Sourced from process 37. 3 2 1 4 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC PD TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation - Derate above 25°C @ TA=25°C Value 20 30 5 1 1.5 12 - 55 ~ +150 Units V V V A Watts mW/°C °C Operating and Storage Junction Temperature Range Electrical Characteristics TC=25°C unless otherwise noted Symbol Off Characteristics V(BR)CES V(BR)CEO V(BR)EBO ICBO IEBO hFE Parameter Test Conditions IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 25V, IE = 0, TA = 25°C VCB = 25V, IE = 0, TA = 125°C VEB = 5V, IC = 0 IC = 5mA, VCE = 10V IC = 500mA, VCE = 1V IC = 1A, VCE = 1V IC = 1A, IB = 100mA IC = 1A, VCE = 1V 50 85 60 Min. 25 20 5 10 1 10 Typ. Max. Units V V V µA mA µA Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain On Characteristics (1) 375 0.5 1 V V VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage ©2001 Fairchild Semiconductor Corporation Rev. A, August 2001 BCP68 Package Demensions SOT-223 0.08MAX 3.00 ±0.10 MAX1.80 1.75 ±0.20 3.50 ±0.20 (0.60) 0.65 ±0.20 +0.04 0.06 –0.02 2.30 TYP (0.95) 4.60...