BCP69

BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 — 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NXP BCP69 SOT223 BC869 SOT89 BC69PA SOT1061 JEITA SC-73 SC-62 - [1] Valid for all available selection groups. JEDEC TO-243 - NPN complement BCP68 BC868 BC68PA 1.2 Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified 1.3 Applications  Linear voltage regulators  High-side switches  Battery-driven devices  Power management  MOSFET drivers  Amplifiers 1.4 Quick reference data Table 2. Symbol VCEO IC ICM Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current single pulse; tp  1 ms Min Typ Max Unit - - 20 V - - 2 A - - 3 A NXP Semiconductors BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Table 2. Symbol hFE Quick reference data …continued Parameter Conditions DC current gain hFE selection -16 hFE selection -25 VCE = 1 V; IC = 500 mA VCE = 1 V; IC = 500 mA VCE = 1 V; IC = 500 mA [1] Pulse test: tp  300 s;  = 0.02. 2. Pinning information ...