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QK010NH5 Dataheets PDF



Part Number QK010NH5
Manufacturers Littelfuse
Logo Littelfuse
Description Triac
Datasheet QK010NH5 DatasheetQK010NH5 Datasheet (PDF)

Qxx10xx & Qxx10xHx Series 10 Amp Standard & Alternistor (High Commutation) Triacs Thyristor Datasheet RoHS Description The Qxx10xx and Qxx10xHx Series are 10 Amp bi-directional solid state switches. They are designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Standard type devices normally operate in Quadrants I & III triggered from AC line. Additional Information Resources Agency * .

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Qxx10xx & Qxx10xHx Series 10 Amp Standard & Alternistor (High Commutation) Triacs Thyristor Datasheet RoHS Description The Qxx10xx and Qxx10xHx Series are 10 Amp bi-directional solid state switches. They are designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Standard type devices normally operate in Quadrants I & III triggered from AC line. Additional Information Resources Agency * - L Package Only Accessories Samples Agency Approval Agency File Number E71639* Symbol IT(RMS) VDRM/ VRRM IGT (Q1) Main Features Value 10 400 to 1000 5 to 50 Unit A V mA Features & Benefits ■ RoHS-compliant ■ Glass – passivated junctions ■ Voltage capability up to 1000 V ■ Surge capability up to 120 A ■ 2500Vrms min. isolation between mounting tab and active terminals ■ Solid-state switching eliminates arcing or contact bounce that create voltage transients ■ No contacts to wear out from reaction of switching events ■ Restricted (or limited) RFI generation, depending on activation point sine wave ■ UL Recognized to UL 1557 as an Electrically Isolated Semiconductor Device Applications Alternistor type devices are used in applications requiring high commutation performance such as controlling inductive loads. Isolated packages are offered with internal construction, having the case or mounting tab electrically isolated from the semiconductor chip. Schematic Symbol MT2 MT1 G © 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 05/10/21 Qxx10xx & Qxx10xHx Series 10 Amp Standard & Alternistor (High Commutation) Triacs Thyristor Datasheet Symbol IT(RMS) ITSM I2t di/dt IGTM PG(AV) Tstg TJ Absolute Maximum Ratings — Standard Triac Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, TJ initial = 25°C) Qxx10Ry/Qxx10Ny Qxx10Ly f = 50 Hz f = 60 Hz TC = 95°C TC = 90°C t = 20 ms t = 16.7 ms I2t Value for fusing Critical rate of rise of on-state current IG = 200mA with ≤ 0.1μs rise time Peak gate trigger current Average gate power dissipation Storage temperature range tp = 8.3 ms f = 120 Hz tp ≤ 10 μs IGT ≤ IGTM TJ = 125°C TJ = 125°C TJ = 125°C Operating junction temperature range Value 10 100 120 60 70 1.8 0.5 -40 to 150 -40 to 125 Unit A A A2s A/μs A W °C °C Symbol IT(RMS) ITSM I2t di/dt IGTM PG(AV) Tstg TJ Absolute Maximum Ratings — Alternistor Triac (3 Quadrants) Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, TJ initial = 25°C) Qxx10LHy Qxx10RHy/Qxx10NHy f = 50 Hz f = 60 Hz TC = 90°C TC = 95°C t = 20 ms t = 16.7 ms I2t Value for fusing Critical rate of rise of on-state current Peak gate trigger current Average gate power dissipation Storage temperature range tp = 8.3 ms f = 120 Hz tp ≤ 10 μs IGT ≤ IGTM - - TJ = 125°C TJ = 125°C TJ = 125°C Operating junction temperature range - Value 10 110 120 60 70 2.0 0.5 -40 to 150 -40 to 125 Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Standard Triac Symbol IGT Test Conditions VD = 12V RL = 60 Ω Quadrant I – II – III IV MAX. Qxx10x4 25 50 Qxx10x5 50 75 (TYP) VGT VD = 12V RL = 60 Ω I – II – III VGD VD = VDRM RL = 3.3 kΩ TJ = 125°C ALL IH IT = 200mA 400V MAX. MIN. MAX. 1.3 0.2 35 50 150 225 dv/dt VD = VDRM Gate Open TJ = 125°C 600V MIN. 100 200 800V 75 175 VD = VDRM Gate Open TJ = 100°C 1000V 50 150 (dv/dt)c (di/dt)c = 5.4 A/ms TJ = 125°C TYP. 2 4 tgt IG = 2 x IGT PW = 15µs IT = 14.1 A(pk) TYP. 3.0 3.0 Note: xx = voltage, x = package, y = sensitivity Unit A A A2s A/μs A W °C °C Unit mA V V mA V/μs V/μs μs © 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 05/10/21 Qxx10xx & Qxx10xHx Series 10 Amp Standard & Alternistor (High Commutation) Triacs Thyristor Datasheet Symbol IGT VGT VGD IH dv/dt (dv/dt)/c tgt Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Alternistor Triac (3 Quadrants) Test Conditions Quadrant VD=12V, RL=60Ω I-II-III VD=VDRM, RL=3.3kΩ,TJ=125°C Initial IT=100mA 400V VD=VDRM, Gate Open, TJ=125°C 600V 800V VD=VDRM, Gate Open, TJ=100°C 1000V VD=2/3VDRM, Gate Open,TJ=125°C 800V (di/dt)/c=5.4 A/ms, TJ=125°C IG = 2 X IGT, PW=15µs, IT=14.1A(pk) MAX MAX MIN MAX MIN. TYP. TYP. Value Qxx10xH2 Qxx10xH5 5 50 1.3 1.3 0.2 0.2 10 50 - 750 - 650 - 500 - 300 150 - 3.5 30 3 4 Unit mA V V mA V/us V/us µs Static Characteristics Symbol VTM IDRM IRRM VDRM = VRRM Test Conditions ITM = 14.1A tp = 380 µs TJ = 25°C TJ = 125°C TJ = 100°C 400 - 600V 400 - 800V 1000V MAX. MAX. Value 1.60 10 2 3 Unit V μA mA Thermal Resistances Symbol RƟ(J-C) Parameter Junction to case (AC) RƟ(J-A) Junction to ambient (AC) Note: xx = voltage,.


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