Document
Qxx10xx & Qxx10xHx Series
10 Amp Standard & Alternistor (High Commutation) Triacs
Thyristor Datasheet
RoHS
Description
The Qxx10xx and Qxx10xHx Series are 10 Amp bi-directional solid state switches. They are designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Standard type devices normally operate in Quadrants I & III triggered from AC line.
Additional Information
Resources
Agency * - L Package Only
Accessories
Samples
Agency Approval
Agency File Number E71639*
Symbol IT(RMS)
VDRM/ VRRM IGT (Q1)
Main Features
Value 10
400 to 1000 5 to 50
Unit A V
mA
Features & Benefits
■ RoHS-compliant ■ Glass – passivated junctions ■ Voltage capability up to 1000
V
■ Surge capability up to 120 A ■ 2500Vrms min. isolation
between mounting tab and active terminals
■ Solid-state switching eliminates arcing or contact bounce that create voltage transients
■ No contacts to wear out from reaction of switching events
■ Restricted (or limited) RFI generation, depending on activation point sine wave
■ UL Recognized to UL 1557 as an Electrically Isolated Semiconductor Device
Applications
Alternistor type devices are used in applications requiring high commutation performance such as controlling inductive loads. Isolated packages are offered with internal construction, having the case or mounting tab electrically isolated from the semiconductor chip.
Schematic Symbol
MT2
MT1
G
© 2021 Littelfuse, Inc.
1
Specifications are subject to change without notice.
Revised: GD. 05/10/21
Qxx10xx & Qxx10xHx Series
10 Amp Standard & Alternistor (High Commutation) Triacs
Thyristor Datasheet
Symbol
IT(RMS)
ITSM I2t di/dt IGTM PG(AV) Tstg TJ
Absolute Maximum Ratings — Standard Triac
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current (full cycle, TJ initial = 25°C)
Qxx10Ry/Qxx10Ny Qxx10Ly f = 50 Hz f = 60 Hz
TC = 95°C TC = 90°C t = 20 ms t = 16.7 ms
I2t Value for fusing Critical rate of rise of on-state current
IG = 200mA with ≤ 0.1μs rise time Peak gate trigger current
Average gate power dissipation
Storage temperature range
tp = 8.3 ms
f = 120 Hz tp ≤ 10 μs IGT ≤ IGTM
TJ = 125°C
TJ = 125°C TJ = 125°C
Operating junction temperature range
Value
10
100 120 60 70 1.8 0.5 -40 to 150 -40 to 125
Unit A
A A2s A/μs A W °C °C
Symbol
IT(RMS)
ITSM
I2t di/dt IGTM PG(AV) Tstg
TJ
Absolute Maximum Ratings — Alternistor Triac (3 Quadrants)
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current (full cycle, TJ initial = 25°C)
Qxx10LHy Qxx10RHy/Qxx10NHy
f = 50 Hz f = 60 Hz
TC = 90°C TC = 95°C t = 20 ms t = 16.7 ms
I2t Value for fusing Critical rate of rise of on-state current
Peak gate trigger current Average gate power dissipation
Storage temperature range
tp = 8.3 ms
f = 120 Hz tp ≤ 10 μs IGT ≤ IGTM
-
-
TJ = 125°C TJ = 125°C TJ = 125°C
Operating junction temperature range
-
Value
10
110 120 60 70 2.0 0.5 -40 to 150 -40 to 125
Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Standard Triac
Symbol IGT
Test Conditions VD = 12V RL = 60 Ω
Quadrant
I – II – III IV
MAX.
Qxx10x4 25 50
Qxx10x5 50
75 (TYP)
VGT
VD = 12V RL = 60 Ω
I – II – III
VGD
VD = VDRM RL = 3.3 kΩ TJ = 125°C
ALL
IH
IT = 200mA
400V
MAX. MIN. MAX.
1.3
0.2
35
50
150
225
dv/dt
VD = VDRM Gate Open TJ = 125°C
600V
MIN.
100
200
800V
75
175
VD = VDRM Gate Open TJ = 100°C
1000V
50
150
(dv/dt)c
(di/dt)c = 5.4 A/ms TJ = 125°C
TYP.
2
4
tgt
IG = 2 x IGT PW = 15µs IT = 14.1 A(pk)
TYP.
3.0
3.0
Note: xx = voltage, x = package, y = sensitivity
Unit A
A A2s A/μs A W °C °C
Unit mA
V V mA
V/μs
V/μs μs
© 2021 Littelfuse, Inc.
2
Specifications are subject to change without notice.
Revised: GD. 05/10/21
Qxx10xx & Qxx10xHx Series
10 Amp Standard & Alternistor (High Commutation) Triacs
Thyristor Datasheet
Symbol IGT VGT VGD IH
dv/dt
(dv/dt)/c tgt
Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Alternistor Triac (3 Quadrants)
Test Conditions
Quadrant
VD=12V, RL=60Ω
I-II-III
VD=VDRM, RL=3.3kΩ,TJ=125°C Initial IT=100mA
400V
VD=VDRM, Gate Open, TJ=125°C
600V 800V
VD=VDRM, Gate Open, TJ=100°C
1000V
VD=2/3VDRM, Gate Open,TJ=125°C
800V
(di/dt)/c=5.4 A/ms, TJ=125°C
IG = 2 X IGT, PW=15µs, IT=14.1A(pk)
MAX MAX MIN MAX
MIN.
TYP. TYP.
Value
Qxx10xH2
Qxx10xH5
5
50
1.3
1.3
0.2
0.2
10
50
-
750
-
650
-
500
-
300
150
-
3.5
30
3
4
Unit mA
V V mA
V/us
V/us µs
Static Characteristics
Symbol VTM
IDRM IRRM
VDRM = VRRM
Test Conditions
ITM = 14.1A tp = 380 µs TJ = 25°C TJ = 125°C TJ = 100°C
400 - 600V 400 - 800V
1000V
MAX. MAX.
Value 1.60 10
2 3
Unit V μA
mA
Thermal Resistances
Symbol RƟ(J-C)
Parameter Junction to case (AC)
RƟ(J-A)
Junction to ambient (AC)
Note: xx = voltage,.