BCR08AS-8

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS-8 OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 1.5±0.1 2.5±0.1 1 2 3 0.8 MIN 0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 0.4 +0.03 –0.05 IT (RMS) ..................................................................... 0.8A VDRM ....................................................................... 400V IFGT !, IRGT !, IRGT # ............................................. 5mA IFGT # ..................................................................... 10mA 3 1 SOT-89 APPLICATION Hybrid IC, solid state relay, control of household equipment such as electric fan · washing machine, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 (marked “B”) 400 500 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Ta=40° C V4 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 3.9±0.3 Ratings 0.8 8 0.26 1 ...