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BCR103F Dataheets PDF



Part Number BCR103F
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon Digital Transistor
Datasheet BCR103F DatasheetBCR103F Datasheet (PDF)

BCR103... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR103/F BCR103L3/T C 3 BCR103U C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07184 1 E1 2 B1 3 C2 EHA07174 Type BCR103 BCR103F BCR103L3 BCR103T BCR103U Marking WAs WAs WA WAs WAs 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E Pin Configura.

  BCR103F   BCR103F



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BCR103... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR103/F BCR103L3/T C 3 BCR103U C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07184 1 E1 2 B1 3 C2 EHA07174 Type BCR103 BCR103F BCR103L3 BCR103T BCR103U Marking WAs WAs WA WAs WAs 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E Pin Configuration 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Aug-29-2003 BCR103... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR103, TS ≤ 102°C BCR103F, TS ≤ 128°C BCR103L3, TS ≤ 135°C BCR103T, TS ≤ 109°C BCR103U, TS ≤ 118°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR103 BCR103F BCR103L3 BCR103T BCR103U 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 10 100 200 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 133 °C Unit K/W 2 Aug-29-2003 BCR103... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 20 0.8 0.8 1.5 0.9 - 2.2 1 140 3 100 3.5 0.3 1.5 2.5 2.9 1.1 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA mA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 20 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 1 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 1 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% MHz pF fT Ccb 3 Aug-29-2003 BCR103... DC current gain hFE = ƒ(IC) VCE = 5V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 2 10 2 A h FE 10 1 IC 10 1 10 0 10 -1 -4 10 -3 -2 10 10 A 10 -1 10 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1 IC VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) 10 -1 Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 -2 A A 10 -3 10 -2 IC IC 10 -4 10 -3 10 -5 10 -4 -1 10 0 1 10 10 V 10 2 10 -6 0.6 0.8 1 1.2 1.4 V 1.7 Vi(on) Vi(off) 4 Aug-29-2003 BCR103... Total power dissipation Ptot = ƒ(TS) BCR103 300 Total power dissipation Ptot = ƒ(TS) BCR103F 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0.


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