BCR103...
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
BCR103...
NPN Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) For 6-PIN packages: two (galvanic) internal isolated
transistors with good matching in one package
BCR103/F BCR103L3/T
C 3
BCR103U
C1 6
B2 5
E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07184
1 E1
2 B1
3 C2
EHA07174
Type BCR103 BCR103F BCR103L3 BCR103T BCR103U
Marking WAs WAs WA WAs WAs 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E
Pin Configuration 3=C 3=C 3=C 3=C -
Package SOT23 TSFP-3 TSLP-3-4 SC75
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1
Aug-29-2003
BCR103...
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR103, TS ≤ 102°C BCR103F, TS ≤ 128°C BCR103L3, TS ≤ 135°C BCR103T, TS ≤ 109°C BCR103U, TS ≤ 118°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR103 BCR103F BCR103L3 BCR103T BCR103U
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 10 100 200 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 133
°C
Unit K/W
2
Aug-29-2003
BCR103...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB...