DatasheetsPDF.com

BCR108S Dataheets PDF



Part Number BCR108S
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Digital Transistor
Datasheet BCR108S DatasheetBCR108S Datasheet (PDF)

BCR 108S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in on package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Type BCR 108S Marking Ordering Code Pin Configuration WHs Package Q62702-C2414 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS.

  BCR108S   BCR108S



Document
BCR 108S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in on package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Type BCR 108S Marking Ordering Code Pin Configuration WHs Package Q62702-C2414 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 5 10 100 250 150 - 65 ... + 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 275 ≤ 140 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-26-1996 BCR 108S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 50 2.2 0.047 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 164 nA VCB = 40 V, IE = 0 Emitter cutoff current IEBO - VEB = 5 V, IC = 0 DC current gain hFE 70 - V 0.3 0.8 1.1 2.9 0.052 kΩ - IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) VCEsat Vi(off) 0.4 IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 0.5 IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 1.5 0.042 AC Characteristics Transition frequency fT 170 3 - MHz pF - IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Nov-26-1996 BCR 108S DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20 10 3 10 2 - hFE 10 2 IC mA 10 1 10 1 10 0 -1 10 10 0 10 1 mA 10 0 0.0 0.1 0.2 0.3 V IC 0.5 V CEsat Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 10 2 10 1 mA mA IC 10 1 IC 10 0 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 V 10 -3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V i(on) V 1.0 V i(off) Semiconductor Group 3 Nov-26-1996 BCR 108S Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy 300 mW Ptot 200 TS TA 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load Ptotmax / PtotDC = f(tp) 10 3 10 3 K/W - RthJS 10 2 P totmax/PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Nov-26-1996 .


BCR108L3 BCR108S BCR108S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)