BCR112

BCR 112 NPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) Type BCR 112 Marking Ordering Code WFs Q62702-C2254 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 10 15 100 200 150 - 65 ... + 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 350 ≤ 240 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Nov-26-1996 BCR 112 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 50 4.7 1 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 1.61 20 V 0.3 1.5 2.5 6.2 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 1 IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 3.2 0.9 AC Characteristics Transition freque...