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PHOTOTRANSISTOR PHOTOCOUPLER. FL817 Datasheet |
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Production specification
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
FEATURES
z Current transfer ratio
（CTR：50%-600% at IF=5mA,VCE=5V）
z High isolation voltage between inputc
and output （Viso=5000V rms）
z Creepage distance＞7.62mm
z Pb free and ROHS compliant
z UL/CUL Approved (File No. E340048)
Description
The FL817 series of devices each consist of an infrared
Emitting diodes, optically coupled to a phototransistor detector.
They are packaged in a 4-pin DIP package and available in
Wide-lead spacing and SMD option.
FL817 Series
DIP4L
APPLICATIONS
z Programmable controllers
z System appliances,measuring instruments
z Telecommunication equipments
z Home appliances,such as fan heaters,etc
z Signal transmission between circuits of different potentials
And impedances
J006
Rev.A
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Production specification
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER FL817 Series
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Rating
Input
Forward voltage
Reverse Voltage
Power dissipation
IF
VR
P
50
6
70
Output
Collector-Emitter voltage
Emitter- Collector voltage
Collector Current
VCEO
VECO
Ic
80
6
50
Collector Power dissipation
Total Power dissipation
Isolation voltage
PC
Ptot
Viso
150
200
5000
Rated impulse isolation voltage
Rated repetitive peak isolation voltage
Operating temperature
VIOTM
VIORM
Topr
6000
630
-30~+100
Storage temperature
Tstg -55~+125
Solding temperature
Tsol 260
Unit
mA
V
mW
V
V
mA
mW
mW
V rms
V
V
℃
℃
℃
J006
Rev.A
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Production specification
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER FL817 Series
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
INPUT
Parameter
Forward current
Symbol Condition
VF IF=20mA
Min. Typ. Max. Unit
- 1.2 1.4 V
Reverse Current
IR
VR=4V
- - 10 uA
OUTPUT
Terminal capacitance
Collector
Dark Current
Collector-Emitter
breakdown voltage
Emitter–Collector
breakdown voltage
Collector Current
Ct
ICEO
BVCEO
BVECO
Ic
Current Transfer ratio CTR
V=0,f=1KHz
VCE=20V,IF=0
Ic=0.1mA,IF=0
IE=10uA,IF=0
IF=5mA,
VCE=5V
-
-
80
6
2.5
50
30
-
-
-
-
-
250 pF
100 nA
-V
-V
30 mA
600 %
TRANSFER
CHARACTERISTICS
Collector-emitter
saturation voltage
Isolation resistance
VCE(Sat)
Riso
Floating capacitance
Cut-off frequency
Cf
fc
Rise time
Fall Time
Tr
Tf
IF=20mA
IC=1mA
DC500V,
40~60%R.H
V= 0, f = 1MHz
- 0.1 0.2
5X1010 1X1011 -
- 0.6 1
VCE=5V, IC=2 mA,
RL=100Ω, -3dB
VCE=2V
IC=2mA
RL=100Ω
-
-
-
80 -
4 18
3 18
V
Ω
pF
kHz
us
us
Rank Table of Current Transfer Ratio CTR
Rank Mark
Min.(%)
L 50
A
B
C
D
L or A or B or C or D
80
130
200
300
50
Notes：
1． Conditions:IF=5mA, VCE=5V,Ta=25℃
Max.(%)
100
160
260
400
600
600
J006
Rev.A
www.gmesemi.com
3
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