Silicon Hot–Carrier Diodes
Schottky Barrier Diode
These devices are designed primarily for high–efficiency UHF and VHF d...
Silicon Hot–Carrier Diodes
Schottky Barrier Diode
These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are available in a Surface Mount package.
Extremely Low Minority Carrier Lifetime – 15 ps (Typ) Very Low Capacitance – 1.5 pF (Max) @ V R = 15 V Low Reverse Leakage – I R = 13 nAdc (Typ) Device Marking: 4T
1 CATHODE
2 ANODE
MAXIMUM RATINGS ( T J =125°C unless otherwise noted )
Symbol
Rating
V R Reverse Voltage
Value 30
MMDL301T1
30 VOLTS SILICON HOT–CARRIER DETECTOR AND SWITCHING DIODES
1
2 PLASTIC SOD– 323
CASE 477
Unit Volts
THERMAL CHARACTERISTICS
Symbol PD
R θJA T J , T stg
Characteristic Total Device Dissipation FR–5 Board,*
T A = 25°C Derate above 25°C Thermal Resistance Juncti...