BCR 129S
NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver ...
BCR 129S
NPN Silicon Digital
Transistor Array Preliminary data Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated
Transistors in one package Built in bias resistor (R1=10kΩ)
Type BCR 129S
Marking Ordering Code Pin Configuration WVs Q62702-
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 5 20 100 250 150 - 65 ... + 150 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
RthJA RthJS
≤ 275 ≤ 140
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Dec-18-1996
BCR 129S
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
50 10 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Base-emitter breakdown voltage
V(BR)EBO
5
IE = 10 µA, IC = 0
Collector cutoff current
ICBO
100
nA 120 630 V 0.3 1 1.1 13 kΩ
VCB = 40 V, IE = 0
DC current gain
hFE VCEsat Vi(off)
0.4
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
0.5
IC = 2 mA, VCE ...