BCR12CS

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR12CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12CS OUTLINE DRAWING Dimensions in mm 4 1.5 MAX 10.5 MAX 4.5 1.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME ∗ 3.0 –0.5 +0.3 0 –0 +0.3 VOLTAGE CLASS 1 5 0.8 0.5 1 2 3 24 2.6±0.4 4.5 ∗ Measurement point of case temperature IT (RMS) ...................................................................... 12A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5 APPLICATION Solid state relay, hybrid IC 1 1 2 3 3 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220S MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tc =98°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 12 120 60 5 0.5 10 2 –40 ~ +125 –40 ~ +125 1.2 Unit A A A2s W W V A °C °C g V1. Gate open. Feb.1999 (1.5) MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR12CS M...