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2N06L05

Infineon

Power-Transistor

OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 ...


Infineon

2N06L05

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Description
OptiMOS® Power-Transistor Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) PG-TO263-3-2 Ultra low Rds(on) 100% Avalanche tested IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 Product Summary V DS R DS(on),max (SMD version) ID 55 V 4.5 mΩ 80 A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N06S2L-05 IPP80N06S2L-05 IPI80N06S2L-05 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code Marking SP0002-19004 2N06L05 SP0002-19000 2N06L05 SP0002-19002 2N06L05 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) I D,pulse T C=25 °C E AS I D= 80 A V GS P tot T C=25 °C T j, T stg Value 80 80 320 8...




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