N-Channel Enhancement Mode MOSFET
HY5012W/A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Dr...
Description
HY5012W/A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
TC=25°C
125 ±25 175 55 to 175 300
IDM Pulsed Drain Current * ID Continuous Drain Current
PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
1100** 300 196 500 250 0.3 40
EAS Avalanche Energy, Single Pulsed
L=0.5mH
2000***
Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=100V
Electrical Characteristics
(T C
=
25°C
Unless
Otherwise
Noted)
Unit
V °C °C A A A W °C/W
mJ
Symbol
Parameter
Test Conditions
HY5012 Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Bre...
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