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SIDACtor Device. P6002ADL Datasheet |
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High Surge Current Three-pin SIDACtor® Device
RoHS
1 This SIDACtor device is a 1000 A solid state protection device offered in a TO-220 package.
(T) 2 It protects equipment located in the severe surge environment of CATV (Community
3 (G) Antenna TV) systems and antenna locations.
(R)
Electrical Parameters
Part
Number *
P6002ADL
VDRM
Volts
550
VS
Volts
700
VT
Volts
5.5
IDRM
µAmps
5
IS
mAmps
800
IT
Amps
2.2
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For surge ratings, see table below.
IH
mAmps
50
Electrical Parameters
Part
Number *
P3100ADL
VDRM
Volts
280
VS
Volts
360
VT
Volts
5.5
IDRM
µAmps
5
IS
mAmps
800
IT
Amps
2.2
IH
mAmps
150
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For surge ratings, see table below.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.
• IPP is a repetitive surge rating and is guaranteed for the life of the product.
• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
• VDRM is measured at IDRM.
• VS is measured at 100 V/µs.
• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.
Surge Ratings in Amps
Series
D
8x20 *
1.2x50 **
Amps
1000
IPP
10x1000 *
10x1000 **
Amps
250
ITSM
50 / 60 Hz
Amps
120
di/dt
Amps/µs
500
* Current waveform in µs
** Voltage waveform in µs
Note: P6002AD is shown. P3100AD has no center lead.
Telecom Design Guide • © 2006 Littelfuse
3 - 85
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High Surge Current Three-pin SIDACtor® Device
Thermal Considerations
Package
Modified
TO-220
Symbol
TJ
TS
RθJA
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance: Junction to Ambient
Value
-40 to +150
-65 to +150
60
Unit
°C
°C
°C/W
PIN 1
PIN 3
PIN 2
Capacitance Values
pF
Part Number
MIN
MAX
P6002ADL
60 200
P3100ADL
100 150
Note: Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias.
+I
IT
IS
IH
IDRM
-V
+V
VT VDRM
VS
V-I Characteristics
-I
tr = rise time to peak value
100
Peak td = decay time to half value
Value
Waveform = tr x td
50 Half Value
0
0 tr
td
tr x td Pulse Waveform
t – Time (µs)
14
12
10
8
6
4 25 ˚C
2
0
-4
-6
-8
-40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized VS Change versus Junction Temperature
2.0
1.8
1.6
1.4
1.2 25 ˚C
1.0
0.8
0.6
0.4
-40 -20 0 20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
Normalized DC Holding Current versus Case Temperature
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© 2006 Littelfuse • Telecom Design Guide
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