BCR158F

BCR158.../SEMB10 PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2kΩ, R2=47kΩ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR158/F/L3 BCR158T/W C 3 SEMB10 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07183 1 E1 2 B1 3 C2 EHA07173 Type BCR158 BCR158L3 BCR158F BCR158T BCR158W SEMB10 Marking WIs WI WIs WIs WIs W5 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSFP-3 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 May-18-2004 BCR158.../SEMB10 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR158, TS ≤ 102°C BCR158F, TS ≤ 128°C BCR158L3, TS ≤ 135°C BCR158T, TS ≤ 109°C BCR158W, TS ≤ 124°C SEMB10, T S ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR158 BCR158F BCR158L3 BCR158T BCR158W SEMB10 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 10 100 200 250 250 250 250 250 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 ≤ 300 Unit V mA mW Tj Tstg Symbol RthJS °C Unit K/W 2 May-18-2004 BCR158.../SEMB10 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max....