BCR162...
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
BCR162...
PNP Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7kΩ , R2 = 4.7kΩ )
BCR162/F/L3 BCR162T
C 3
R1 R2
1 B
2 E
EHA07183
Type BCR162 BCR162F BCR162L3 BCR162T
Marking WUs WUs WU WUs 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E
Pin Configuration 2=C 2=C 2=C 2=C -
Package SOT23 TSFP-3 TSLP-3-4 SC75
1
Aug-29-2003
BCR162...
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR162, TS ≤ 102°C BCR162F, TS ≤ 128°C BCR162L3, TS ≤ 135°C BCR162T, TS ≤ 109°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR162 BCR162F BCR162L3 BCR162T
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 10 15 100 200 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 165
°C
Unit K/W
2
Aug-29-2003
BCR162...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2
50 20 0.8 1 3.2 0.9 -
4.7 1 200 3
100 1.61 0.3 1.5 2.5 6.2 1.1 kΩ
Collector-base cutoff current
VCB = 40 V, IE = 0
nA mA V
Emitter-bas...