BCR162F

BCR162... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7kΩ , R2 = 4.7kΩ ) BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type BCR162 BCR162F BCR162L3 BCR162T Marking WUs WUs WU WUs 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E Pin Configuration 2=C 2=C 2=C 2=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 1 Aug-29-2003 BCR162... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR162, TS ≤ 102°C BCR162F, TS ≤ 128°C BCR162L3, TS ≤ 135°C BCR162T, TS ≤ 109°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR162 BCR162F BCR162L3 BCR162T 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 15 100 200 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 °C Unit K/W 2 Aug-29-2003 BCR162... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 20 0.8 1 3.2 0.9 - 4.7 1 200 3 100 1.61 0.3 1.5 2.5 6.2 1.1 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA mA V Emitter-bas...