BCR169S
PNP Silicon Digital Transistor Array
Switching circuit, inverter, interface circuit,
4 5 6
driver circuit
...
BCR169S
PNP Silicon Digital
Transistor Array
Switching circuit, inverter, interface circuit,
4 5 6
driver circuit
Two ( galvanic) internal isolated
Transistors
with good matching in one package
Built in bias resistor ( R1=4.7k)
C1 6 B2 5 E2 4
2 1
3
VPS05604
R1 TR1
R1 TR2
1 E1
2 B1
3 C2
EHA07266
Type BCR169S
Maximum Ratings Parameter
Marking WSs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 5 15 100 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point 1) RthJS
140
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Dec-13-2001
BCR169S
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor R1 Vi(on) Vi(off) VCEsat hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max.
Unit
50 50 5...
