BCR179

BCR179.../SEMB4 PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit. Built in bias resistor (R1 = 10kΩ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR179F/L3 BCR179T C 3 SEMB4 C1 6 B2 5 E2 4 R1 R1 TR1 R1 TR2 1 B 2 E EHA07180 1 E1 2 B1 3 C2 EHA07266 Type BCR179F BCR179L3 BCR179T SEMB4 Marking WWs WW WWs WW 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 3=C 3=C 3=C - Package TSFP-3 TSLP-3-4 SC75 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 May-17-2004 BCR179.../SEMB4 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipation BCR179F, TS ≤ 128°C BCR179L3, TS ≤ 135°C BCR179T, TS ≤ 109°C SEMB4, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR179F BCR179L3 BCR179T SEMB4 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 20 100 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 150 ... -65 Value ≤ 90 ≤ 60 ≤ 109 ≤ 300 °C Unit K/W 2 May-17-2004 BCR179.../SEMB4 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakd...