BCR183W

BCR183... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR183/F/L3 BCR183T/W C 3 BCR183S BCR183U C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07183 1 E1 2 B1 3 C2 EHA07173 Type BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W Marking WMs WMs WM WMs WMs WMs WMs 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E Pin Configuration 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Nov-17-2003 BCR183... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR183, TS ≤ 102°C BCR183F, TS ≤ 128°C BCR183L3, TS ≤ 135°C BCR183S, T S ≤ 115°C BCR183T, TS ≤ 109C BCR183U, TS ≤ 118°C BCR183W, TS ≤ 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 20 100 200 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 133 ≤ 105 °C Unit K/W 2 Nov-17-2003 BCR183... Electrical Characteristics at...