BCR185.../SEMB9
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built ...
BCR185.../SEMB9
PNP Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 10kΩ , R2 = 47kΩ ) For 6-PIN packages: two (galvanic) internal isolated
transistors with good matching in one package
BCR185/F/L3 BCR185T/W
C 3
BCR185S/U SEMB9
C1 6 B2 5 E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07183
1 E1
2 B1
3 C2
EHA07173
Type
Marking
Pin Configuration
Package
BCR185 BCR185F BCR185L3 BCR185S BCR185T BCR185U BCR185W SEMB9
WNs WNs WN WNs WNs WNs WNs WN
1=B 1=B 1=B 1=B 1=B
2=E 2=E 2=E 2=E 2=E
3=C 3=C 3=C 3=C 3=C
-
-
-
SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
Jun-14-2004
BCR185.../SEMB9
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR185 TS ≤ 102°C BCR185F, TS ≤ 128°C BCR185L3, TS ≤ 135°C BCR185S, T S ≤ 115°C BCR185T, TS ≤ 109°C BCR185U, TS ≤ 118°C BCR185W, TS ≤ 124°C SEMB9, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR185 BCR185F BCR185L3 BCR185S BCR185T BCR185U BCR185W SEMB9
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 6 20 100 200 250 250 250 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
≤ 240 ≤ 90 ≤...