Document
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 22 kΩ , R2 = 22 kΩ ) • Pb-free (RoHS compliant) package • Qualified according AEC Q101
BCR191...
BCR191 BCR191W
C 3
R1 R2
1 B
2
E EHA07183
Type BCR191 BCR191W
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipationBCR191, TS ≤ 102°C BCR191W, TS ≤ 124°C Junction temperature Storage temperature
Marking WOs 1=B WOs 1=B
Pin Configuration
2=E 3=C -
-
2=E 3=C -
-
-
Package SOT23 SOT323
Symbol VCEO VCBO Vi(fwd) Vi(rev) IC Ptot
Tj Tstg
Value 50 50 60 10 100
200 250 150 -65 ... 150
Unit V
mA mW
°C
1 2011-08-30
BCR191...
Thermal Resistance Parameter Junction - soldering point1)
BCR191
BCR191W
Symbol RthJS
Value
≤ 240 ≤ 105
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Va.