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BCR192L3

Infineon Technologies AG

PNP Silicon Digital Transistor

BCR192... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...


Infineon Technologies AG

BCR192L3

File Download Download BCR192L3 Datasheet


Description
BCR192... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 22kΩ , R2 = 47kΩ ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR192/F/L3 BCR192T/W C 3 BCR192U C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07183 1 E1 2 B1 3 C2 EHA07173 Type Marking Pin Configuration Package BCR192 BCR192F BCR192L3 BCR192T BCR192U BCR192W WPs WPs WP WPs WPs WPs 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - - - SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Aug-29-2003 BCR192... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR192, TS ≤ 102°C BCR192F, TS ≤ 128°C BCR192L3, TS ≤ 135°C BCR192T, TS ≤ 109°C BCR192U, TS ≤ 118°C BCR192W, TS ≤ 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR192 BCR192F BCR192L3 BCR192T BCR192U BCR192W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 50 30 100 200 250 250 250 250 250 150 150 ... -65 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 133 ≤ 105 Unit V mA mW Tj Tstg Symbol RthJS °C Unit K/W 2 Aug-29-2003 BCR192... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. m...




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