BCR196F

BCR196... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 47kΩ , R2 = 22kΩ ) BCR196/F/L3 BCR196T/W C 3 R1 R2 1 B 2 E EHA07183 Type BCR196 BCR196F BCR196L3 BCR196T BCR196W Marking WXs WXs WX WXs WXs 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E Pin Configuration 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1 Aug-29-2003 BCR196... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR196, TS ≤ 102°C BCR196F, TS ≤ 128°C BCR196L3, TS ≤ 135°C BCR196T, TS ≤ 109°C BCR196W, TS ≤ 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR196 BCR196F BCR196L3 BCR196T BCR196W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 50 70 200 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 150 ... -65 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 °C Unit K/W 2 Aug-29-2003 BCR196... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 50 1,2 1,5 32 1,92 - 47 2,14 150 3 100 220 0,3 2,6 4 62 2,36 kΩ ...