Document
GS816018w/3w2w/3.D6aBtaTSh-2ee5t04U/2.c0o0m/150
100-Pin TQFP Commercial Temp Industrial Temp
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
250 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O
Features
• FT pin for user-configurable flow through or pipeline operation
• Single Cycle Deselect (SCD) operation • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Default to Interleaved Pipeline mode • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 100-lead TQFP package • RoHS-compliant 100-lead TQFP package available
Functional Description
Applications The GS816018/32/36BT is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type origin.