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BCR196L3 Dataheets PDF



Part Number BCR196L3
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description PNP Silicon Digital Transistor
Datasheet BCR196L3 DatasheetBCR196L3 Datasheet (PDF)

BCR196... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ , R2 = 22kΩ ) BCR196/F/L3 BCR196T/W C 3 R1 R2 1 B 2 E EHA07183 Type BCR196 BCR196F BCR196L3 BCR196T BCR196W Marking WXs WXs WX WXs WXs 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E Pin Configuration 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1 Aug-29-2003 BCR196... Maximum Ratings Parameter Collector-emitter voltage Collector-base.

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BCR196... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ , R2 = 22kΩ ) BCR196/F/L3 BCR196T/W C 3 R1 R2 1 B 2 E EHA07183 Type BCR196 BCR196F BCR196L3 BCR196T BCR196W Marking WXs WXs WX WXs WXs 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E Pin Configuration 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1 Aug-29-2003 BCR196... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR196, TS ≤ 102°C BCR196F, TS ≤ 128°C BCR196L3, TS ≤ 135°C BCR196T, TS ≤ 109°C BCR196W, TS ≤ 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR196 BCR196F BCR196L3 BCR196T BCR196W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 50 70 200 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 150 ... -65 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 °C Unit K/W 2 Aug-29-2003 BCR196... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 50 1,2 1,5 32 1,92 - 47 2,14 150 3 100 220 0,3 2,6 4 62 2,36 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0,5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0,3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% MHz pF fT Ccb 3 Aug-29-2003 BCR196... DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 2 mA h FE 10 2 IC 10 1 10 1 10 0 -1 10 0 1 10 10 mA 10 2 10 0 0 0.2 0.4 0.6 V 1 IC VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) 10 2 Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 1 mA mA 10 0 10 1 IC IC 10 -1 10 0 10 -2 10 -1 -1 10 0 1 10 10 V 10 2 10 -3 0 1 2 3 V 5 Vi(on) Vi(off) 4 Aug-29-2003 BCR196... Total power dissipation Ptot = ƒ(TS) BCR196 300 Total power dissipation Ptot = ƒ(TS) BCR196F 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR196L3 300 Total power dissipation Ptot = ƒ(TS) BCR196T 300 mW mW Ptot 150 Ptot 120 °C 200 200 150 100 100 50 50 0 0 20 40 6.


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