LOW POWER USE PLANAR PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
BCR1AM-8
OUTLINE DRAWING
φ5.0 MAX 4.4...
Description
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
BCR1AM-8
OUTLINE DRAWING
φ5.0 MAX 4.4
Dimensions in mm
2
VOLTAGE CLASS TYPE NAME
3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL
CIRCUMSCRIBE CIRCLE φ0.7
1.25 1.25
1.3
12.5 MIN
1
5.0 MAX
1.0 10 0.41 1 0.1 6 1 0.23
IT (RMS) ..................................................................... 1.0A VDRM ....................................................................... 400V IFGT ! ....................................................................... 5mA IRGT !, IRGT # .......................................... 5mA (3mA) V5 IFGT # ..................................................................... 10mA
1 3 2
JEDEC : TO-92
APPLICATION Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines, trigger circuit for low and medium triac, solid state relay, other general purpose control applications
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg —
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360° conduction, Tc=56 °C V 4 60Hz sinewave 1 full cycle, p...
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