Document
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR20A, BCR20B, BCR20C, BCR20E
OUTLINE DRAWING
Dimensions in mm
φ2.0 MIN 3
1
φ11 MAX 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL
2
• IT (RMS) ...................................................................... 20A • VDRM ..............................................................400V/500V • IFGT !, IRGT !, IRGT # ........................................... 30mA
BCR20A
APPLICATION Contactless AC switches, light dimmer, on/off control of traffic signals, on/off control of copier lamps, microwave ovens, solid state relay
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 600 12 500 700 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature
Conditions Commercial frequency, sine full wave, 360° conduction BCR20A, B, C BCR20E Tc =98°C Tb=64 °C
Ratings 20 220 203 5.0 0.5 10 2.0 –20 ~ +125 –20 ~ +125
9 MAX
Unit A A A2s W W V A °C °C
φ8.7 MAX
60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
V1. Gate open.
3 MAX
2
17.5 MAX
Feb.1999
24 MAX
3
1
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Symbol Parameter BCR20A — Weight (Typical value) BCR20B BCR20C BCR20E — — Viso Soldering temperature Mounting torque Isolated voltage BCR20A only, 10 sec. BCR20C only BCR20E only, Ta=25° C, AC 1 minute, T2 terminal to base Conditions Ratings 3.5 9.0 9.0 11 230 30 2.94 1500 °C kg·cm N·m V g Unit
ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) R th (j-b) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case (BCR20A, BCR20B, BCR20C) Junction to base (BCR20E) Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tc=25 °C, Tb=25°C (BCR20E only), ITM=30A, Instantaneous measurement Limits Min. — — — — — — — — 0.2 — —
V3
Typ. — — — — — — — — — — — —
Max. 3.0 1.5 1.5 1.5 1.5 30 30 30 — 1.1 2.4 —
Unit mA V V V V mA mA mA V °C/W °C/W V/µ s
V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Voltage class
VDRM (V)
(dv/dt) c Symbol R Min. — 1. Junction temperature Tj =125° C L 10 V/µ s R — 2. Rate of decay of on-state commutating current (di/dt)c=–10A/ms 3. Peak off-state voltage VD =400V L 10 Unit Test conditions
Commutating voltage and current waveforms (inductive load)
8
400
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c
TIME
TIME TIME VD
10
600
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
BCR20B
2-φ3.2 MIN
Dimensions in mm
BCR20C
2-φ3.2 MIN
BCR20E
5.3 MAX
20 MAX
(φ16) 23±0.2 φ33 MAX 2 φ2.5 MIN φ2.0 MIN 1
20 MAX
1 3 23±0.2 33 MAX
(16.2) 1 1 φ2.0 MIN
2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE 3 TERMINAL φ2.0 MIN
10 MAX 19.5 MAX
1.9 MIN
1.8 MAX 10.5 MAX
25.5 MAX
11 MAX
3 MIN
3
26 MAX
φ8.7 MAX
22 MAX 21 MAX
2 M6 × 1. 0
φ8.7 MAX
2
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS 103 RATED SURGE ON-STATE CURRENT 320
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
7 TC = 25°C 5 Tb = 25°C 3 2
280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102
102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V)
CONDUCTION TIME (CYCLES AT 60Hz)
GATE VOLTAGE (V)
101
PGM = 5.0W IGM = 2A
GATE TRIGGER • CURRENT VOLTAGE (Tj = t°C) GATE TRIGGER • CURRENT VOLTAGE (Tj = 25°C)
3 2 VGM = 10V 7 5 3 VGT = 1.5V 2
PG(AV) = 0.5W
100 (%)
GATE CHARACTERISTICS
GATE TRIGGER CURRENT·VOLTAGE VS. JUNCTION TEMPERATURE 200 TEST PROCEDURE Ι, ΙΙ AND ΙΙΙ 180 160 140 120 100 80 60 GATE TRIGGER VOLTAGE 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C)
Feb.1999
GATE TRIGGER CURRENT
100 7 5 3 2 IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA)
1.8 MAX 12 MAX
φ8.7 MAX
3
22.5 MAX
19 MAX
21 MAX
14
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
M.