Document
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR30AM
OUTLINE DRAWING
15.9 MAX 4
Dimensions in mm
4.5±0.3 1.5±0.2
φ3.2±0.2
5.0 20.0±0.5
TYPE NAME VOLTAGE CLASS
∗
2
2±0.3 1.0±0.2 1 2 3
4 19.5 MIN
0.6±0.2
2.8±0.3
5.45 5.45
∗
4 24 1 2 33 4
Measurement point of case temperature
• IT (RMS) ...................................................................... 30A • VDRM ..............................................................400V/600V • IFGT !, IRGT !, IRGT # ........................................... 50mA
1
T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL
TO-3P
APPLICATION Contactless AC switches, light dimmer, on/off and speed control of small induction motors, on/off control of copier lamps, microwave ovens
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg —
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360° conduction, Tc =75°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 30 300 378 5 0.5 10 2 –40 ~ +125 –40 ~ +125 4.8
Unit A A A2s W W V A °C °C g
V1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case V4 Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tc=25 °C, ITM=45A, Instantaneous measurement Limits Min. — — — — — — — — 0.2 —
V3
Typ. — — — — — — — — — — —
Max. 3.0 1.6 2.5 2.5 2.5 50 50 50 — 1.2 —
Unit mA V V V V mA mA mA V °C/ W V/µ s
V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance R th (b-f) in case of greasing is 0.3°C/W. (dv/dt) c Symbol R 8 400 L 20 V/µ s R 12 600 L 20 — Min. — 1. Junction temperature Tj =125° C 2. Rate of decay of on-state commutating current (di/dt)c=–16A/ms 3. Peak off-state voltage VD =400V Unit Test conditions
Voltage class
VDRM (V)
Commutating voltage and current waveforms (inductive load)
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c
TIME
TIME TIME VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS 103
SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT 500
7 5 3 2
TC = 25°C
400
102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V)
300
200
100 0 100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME (CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE
100 (%)
GATE VOLTAGE (V)
101 7 5 VGT = 2.5V 3 2 100 7 5 3 2
PG(AV) = 0.5W
PGM = 5W
GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C)
102 7 5 3 2
VGM = 10V
103 7 5 4 3 2 102 7 5 4 3 2 IFGT I
TYPICAL EXAMPLE IRGT I, IRGT III
IGM = 2A
IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA)
101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE
100 (%)
GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C)
103 7 5 4 3 2 102 7 5 4 3 2 101
TYPICAL EXAMPLE
TRANSIENT THERMAL IMPEDANCE (°C/W)
102 2 3 5 7 103 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)
–60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER DISSIPATION
ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE
ON-STATE POWER DISSIPATION (W)
50
40
360° CONDUCTION 30 RESISTIVE, INDUCTIVE LOADS 20
CASE TEMPERATURE (°C)
30 50
140 120 100 80 60 40
10
0
0
10
20
40
RESISTIVE, 20 INDUCTIVE LOADS 0 0 10
20
30
40
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (T.