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BCR30GM

Mitsubishi Electric Semiconductor

TRIAC

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30GM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE BCR30GM OUTLINE DRAW...


Mitsubishi Electric Semiconductor

BCR30GM

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Description
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30GM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE BCR30GM OUTLINE DRAWING 2 5.0 MIN 39.2 MAX 20.2 MAX Dimensions in mm 2-φ4.2 23.0MAX 3 20.1 MAX 21.6 MAX 30.0±0.2 7.0 7.0 8.25 6.35 2 1 3 1 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL φ2.0(T1,T2) φ1.55(G) 7.95 6.35 1.5 IT (RMS) ...................................................................... 30A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ........................................... 50mA Viso ........................................................................ 2200V UL Recognized: File No. E80276 3-φ1.3 TYPE NAME VOLTAGE CLASS ∗ LOT No. Tb TEST POINT BCR30GM (C TYPE) APPLICATION Contactless AC switches, light dimmer, on/off and speed control of small induction motors, on/off control of copier lamps, microwave ovens MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Non-repetitive peak off-state voltage V1 Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — — Viso Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mounting torque Weight Isolation voltage Screw M4 Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tb=60°C 60Hz sinew...




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