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BCR3AS

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TRIAC

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3AS OUTLINE DRAW...


Powerex Power Semiconductors

BCR3AS

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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3AS OUTLINE DRAWING Dimensions in mm 6.5 4 1.5±0.2 5.0±0.2 0.5±0.1 ∗ TYPE NAME VOLTAGE CLASS 5.5±0.2 0.9 MAX 1.0 2.3 2.3 MIN 1.0 MAX 10 MAX 0.5±0.2 0.8 2.3 2.3 ∗ Measurement point of case temperature 1 2 3 1 2 33 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL 24 IT (RMS) ........................................................................ 3A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ......................... 15mA (10mA) V2 APPLICATION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications 1 MP-3 MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tc =108°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state curre...




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