TRIAC
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AS
OUTLINE DRAW...
Description
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AS
OUTLINE DRAWING
Dimensions in mm
6.5 4
1.5±0.2
5.0±0.2
0.5±0.1
∗
TYPE NAME VOLTAGE CLASS
5.5±0.2
0.9 MAX
1.0 2.3
2.3 MIN
1.0 MAX
10 MAX
0.5±0.2 0.8
2.3
2.3
∗ Measurement point of
case temperature
1
2
3 1 2 33 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL
24
IT (RMS) ........................................................................ 3A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ......................... 15mA (10mA) V2 APPLICATION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications
1
MP-3
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg —
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360° conduction, Tc =108°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state curre...
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