BCR48PN
NPN/PNP Silicon Digital Transistor Array
4
Switching circuit, inverter, interface circuit,
5 6
driver circu...
BCR48PN
NPN/
PNP Silicon Digital
Transistor Array
4
Switching circuit, inverter, interface circuit,
5 6
driver circuit
Two (galvanic) internal isolated
NPN/
PNP
Transistors in one package
Built in bias resistor
2 1
3
NPN: R1 = 47k, R2 = 47k
PNP: R1= 2.2k, R 2 = 47k
VPS05604
Tape loading orientation
Top View 654 W1s 123 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side
EHA07193
C1 6
B2 5
E2 4
Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device
R2 R1 TR1 R2 1 E1 2 B1 3 C2
EHA07176
TR2 R1
Type BCR48PN
Maximum Ratings Parameter
Marking WTs
Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol VCEO VCBO
NPN PNP NPN PNP NPN PNP VEBO VEBO Vi(on) Vi(on) IC IC Ptot Tj Tstg
Value 50 50 10 5 50 10 70 100 250 150 -65...+150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Emitter-base voltage Input on voltage Input on voltage DC collector current DC collector current Junction temperature Storage temperature
mA mW °C
Total power dissipation, TS = 115 °C
1
Nov-29-2001
BCR48PN
Thermal Resistance Junction - soldering point 1) RthJS
140
K/W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics for
NPN Type Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC c...
