BCR523

BCR 523 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=1kΩ,R2=10kΩ) Type BCR 523 Marking Ordering Code XGs C62702-C2487 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 79 °C Junction temperature Storage temperature Symbol Values 50 50 5 12 500 330 150 - 65 ... + 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS 325 215 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Nov-27-1996 BCR 523 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 50 1 0.1 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 0.72 70 V 0.3 1 1.4 1.3 0.11 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.3 VEB = 5 V, IC = 0 DC current gain IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 0.4 IC = 10 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency R1 R1/R2 fT 0.7 0.09 MHz ...