BCR569
PNP Silizium Digital Transistor
Switching circuit, inverter, interface circuit,
3
driver circuit
Built in b...
BCR569
PNP Silizium Digital
Transistor
Switching circuit, inverter, interface circuit,
3
driver circuit
Built in bias resistor (R1 = 4.7k)
C 3
2 1
VPS05161
R1
1 B
2 E
EHA07180
Type BCR569
Maximum Ratings Parameter
Marking XLs 1=B
Pin Configuration 2=E 3=C
Package SOT23
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 5 30 500 330 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 79 °C Junction temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point1) RthJS
215
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Dec-13-2001
BCR569
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 10 mA, VCE = 0.3 V Input resistor R1 Vi(on) Vi(off) VCEsat hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max.
Unit
50 50 5 120 0.4 0.5 3.2
4.7
100 630 0.3 0.8 1.5 6.2
V
nA V
k
AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz fT 150 MHz
1...
