BCR 573
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resis...
BCR 573
PNP Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=1kΩ,R2=10kΩ)
Type BCR 573
Marking Ordering Code XHs C62702-C2488
Pin Configuration 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 79 °C Junction temperature Storage temperature Symbol Values 50 50 5 12 500 330 150 - 65 ... + 150 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
RthJA RthJS
325 215
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1
Nov-27-1996
BCR 573
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
50 1 0.1 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA mA 0.72 70 V 0.3 1 1.4 1.3 0.11 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.3
VEB = 5 V, IC = 0
DC current gain
IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 50 mA, IB = 2.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
0.4
IC = 10 mA, VCE = 0.3 V
Input resistor Resistor ratio AC Characteristics Transition frequency
R1 R1/R2 fT
0.7 0.09
MHz ...