P-Channel Enhancement Mode Power MOSFET
MSP3401
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ ...
Description
MSP3401
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Lead Free
Application
●PWM applications ●Load switch ●Power management
PIN Configuration
Marking and Pin Assignment
SOT-23 top view
D G
S Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
MSP3401
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30 ±12 -4.2 -30 1.2 -55 To 150
Unit
V V A A W ℃
Thermal Characteristic
Thermal R...
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