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MSP4403W Dataheets PDF



Part Number MSP4403W
Manufacturers MORESEMI
Logo MORESEMI
Description P-Channel Enhancement Mode Power MOSFET
Datasheet MSP4403W DatasheetMSP4403W Datasheet (PDF)

MSP4403W -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-30V,ID =-6.5A RDS(ON) < 42mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Application ● Load switch ● battery protection Lead Free PIN Configuration Marking and pin assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSP4403W MSP4403W SOP-8.

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MSP4403W -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-30V,ID =-6.5A RDS(ON) < 42mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Application ● Load switch ● battery protection Lead Free PIN Configuration Marking and pin assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSP4403W MSP4403W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit -30 ±20 -6.5 -4.5 -30 3.1 -55 To 150 Unit V V A A A W ℃ MORE Semiconductor Company Limited .


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