P-Channel Enhancement Mode Power MOSFET
MSP0405W
-40V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-40V,ID =-5.3A RDS(ON) <80mΩ @ VGS...
Description
MSP0405W
-40V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-40V,ID =-5.3A RDS(ON) <80mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application ● Hard switched and high frequency circuits ● DC-DC converter
PIN Configuration
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSP0405W
MSP0405W
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TS...
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