MSP0440D
-40V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Application
● Power switching application ● ...
