MSP0470D
-40V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-40V,ID =-70A RDS(ON) <10mΩ @ VGS=-10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD ca...
